A Comprehensive Modeling of Threshold Voltage with Consideration of Body Doping Concentration and Body Thickness in Double-Gate FinFETs

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	The 15th Korean Conference on Semiconductors (KCS)
Pages	617-618
Number of pages	2
State	Published - 2008

Cite this

@inproceedings{65a88c6138374e05a60cf5c75771c23c,

title = "A Comprehensive Modeling of Threshold Voltage with Consideration of Body Doping Concentration and Body Thickness in Double-Gate FinFETs",

author = "Sungjin Choi and Jin-Woo Han and Seong-Wan Ryu and Sungho Kim and Yang-Kyu Choi",

year = "2008",

language = "English",

pages = "617--618",

booktitle = "The 15th Korean Conference on Semiconductors (KCS)",

}

TY - GEN

T1 - A Comprehensive Modeling of Threshold Voltage with Consideration of Body Doping Concentration and Body Thickness in Double-Gate FinFETs

AU - Choi, Sungjin

AU - Han, Jin-Woo

AU - Ryu, Seong-Wan

AU - Kim, Sungho

AU - Choi, Yang-Kyu

PY - 2008

Y1 - 2008

M3 - Conference contribution

SP - 617

EP - 618

BT - The 15th Korean Conference on Semiconductors (KCS)

ER -