Abstract
We present the first comprehensive model of effective (average) mobility and local-field mobility for holes in MOSFET inversion layers. The new semiempirical equation for effective mobility, coupled with the new local-field mobility model, permits accurate two-dimensional simulation of source-to-drain current in MOSFET's. The model accounts for the dependence of mobility on transverse and longitudinal electric fields, channel doping concentration, fixed interface charge density, and temperature. It accounts not only for the scattering by fixed interface charges, and bulk and surface acoustic phonons, but it also correctly describes screened Coulomb scattering at low effective transverse fields (near threshold) and surface roughness scattering at high effective transverse fields. The model is therefore applicable over a much wider range of conditions compared to earlier reported inversion layer hole mobility models while maintaining a physically based character.
| Original language | English |
|---|---|
| Pages (from-to) | 151-159 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 38 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1991 |
Bibliographical note
Funding Information:Manuscript received January 19, 1990; revised May 28, 1990. This work was supported by Semiconductor Research Corporation, Intel, and Moto- rola. The review of this paper was arranged by Associate Editor P. K. KO. V. M. Agostinelli, Jr. and A. F. Tasch, Jr. are with the Microelectronics Research Center, The University of Texas-Austin, Austin, TX 787 12. H. Shin was with the Microelectronics Research Center, The University of Texas-Austin, Austin, TX 78712. He is now with Goldstar Electronics Co., Seoul, Korea. IEEE Log Number 9040180.