A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K

Hogyoung Kim, Chan Yeong Jung, Se Hyun Kim, Yunae Cho, Dong Wook Kim

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6 Scopus citations

Abstract

Two oxygen plasma treated InP samples with different plasma powers of 100 and 250 W were prepared and a comparative study on the electrical properties of Cu/n-type InP Schottky diode measured at 300 and 100 K was performed to investigate the current transport mechanism in detail. The forward and reverse bias current-voltage (I-V) characteristics were analyzed with considering various transport models. The fitting to the forward bias I-V characteristics revealed that relatively high ideality factor at 300 K for untreated sample were related with the generation-recombination (GR) current and the large E00 value at 100 K for 100 W plasma treated sample were associated with more significant tunneling effect. The analyses on the reverse bias current characteristics showed the suitable current transport model has changed from thermionic emission (TE) to TE combined with barrier lowering for both untreated and 250 W treated samples and from TE + BL to thermionic field emission for 100 W treated sample with increasing temperature from 100 to 300 K.

Original languageEnglish
Pages (from-to)37-44
Number of pages8
JournalCurrent Applied Physics
Volume16
Issue number1
DOIs
StatePublished - 1 Jan 2016

Keywords

  • Current transport mechanism
  • n-type InP
  • Tunneling current

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