A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K

Hogyoung Kim; Chan Yeong Jung; Se Hyun Kim; Yunae Cho; Dong Wook Kim

doi:10.1016/j.cap.2015.10.008

A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K

Hogyoung Kim, Chan Yeong Jung, Se Hyun Kim, Yunae Cho, Dong Wook Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Two oxygen plasma treated InP samples with different plasma powers of 100 and 250 W were prepared and a comparative study on the electrical properties of Cu/n-type InP Schottky diode measured at 300 and 100 K was performed to investigate the current transport mechanism in detail. The forward and reverse bias current-voltage (I-V) characteristics were analyzed with considering various transport models. The fitting to the forward bias I-V characteristics revealed that relatively high ideality factor at 300 K for untreated sample were related with the generation-recombination (GR) current and the large E₀₀ value at 100 K for 100 W plasma treated sample were associated with more significant tunneling effect. The analyses on the reverse bias current characteristics showed the suitable current transport model has changed from thermionic emission (TE) to TE combined with barrier lowering for both untreated and 250 W treated samples and from TE + BL to thermionic field emission for 100 W treated sample with increasing temperature from 100 to 300 K.

Original language	English
Pages (from-to)	37-44
Number of pages	8
Journal	Current Applied Physics
Volume	16
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2015.10.008
State	Published - 1 Jan 2016

Bibliographical note

Funding Information:
Y.C. and D.K. acknowledge the support from Basic Science Research Program through the National Research Foundation of Korea Grant ( NRF-2013R1A1A2063744 ).

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Keywords

Current transport mechanism
n-type InP
Tunneling current

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10.1016/j.cap.2015.10.008

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title = "A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K",

abstract = "Two oxygen plasma treated InP samples with different plasma powers of 100 and 250 W were prepared and a comparative study on the electrical properties of Cu/n-type InP Schottky diode measured at 300 and 100 K was performed to investigate the current transport mechanism in detail. The forward and reverse bias current-voltage (I-V) characteristics were analyzed with considering various transport models. The fitting to the forward bias I-V characteristics revealed that relatively high ideality factor at 300 K for untreated sample were related with the generation-recombination (GR) current and the large E00 value at 100 K for 100 W plasma treated sample were associated with more significant tunneling effect. The analyses on the reverse bias current characteristics showed the suitable current transport model has changed from thermionic emission (TE) to TE combined with barrier lowering for both untreated and 250 W treated samples and from TE + BL to thermionic field emission for 100 W treated sample with increasing temperature from 100 to 300 K.",

keywords = "Current transport mechanism, n-type InP, Tunneling current",

author = "Hogyoung Kim and Jung, {Chan Yeong} and Kim, {Se Hyun} and Yunae Cho and Kim, {Dong Wook}",

note = "Funding Information: Y.C. and D.K. acknowledge the support from Basic Science Research Program through the National Research Foundation of Korea Grant ( NRF-2013R1A1A2063744 ). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2016",

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doi = "10.1016/j.cap.2015.10.008",

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AU - Kim, Hogyoung

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AU - Kim, Se Hyun

AU - Cho, Yunae

AU - Kim, Dong Wook

N1 - Funding Information: Y.C. and D.K. acknowledge the support from Basic Science Research Program through the National Research Foundation of Korea Grant ( NRF-2013R1A1A2063744 ). Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Two oxygen plasma treated InP samples with different plasma powers of 100 and 250 W were prepared and a comparative study on the electrical properties of Cu/n-type InP Schottky diode measured at 300 and 100 K was performed to investigate the current transport mechanism in detail. The forward and reverse bias current-voltage (I-V) characteristics were analyzed with considering various transport models. The fitting to the forward bias I-V characteristics revealed that relatively high ideality factor at 300 K for untreated sample were related with the generation-recombination (GR) current and the large E00 value at 100 K for 100 W plasma treated sample were associated with more significant tunneling effect. The analyses on the reverse bias current characteristics showed the suitable current transport model has changed from thermionic emission (TE) to TE combined with barrier lowering for both untreated and 250 W treated samples and from TE + BL to thermionic field emission for 100 W treated sample with increasing temperature from 100 to 300 K.

AB - Two oxygen plasma treated InP samples with different plasma powers of 100 and 250 W were prepared and a comparative study on the electrical properties of Cu/n-type InP Schottky diode measured at 300 and 100 K was performed to investigate the current transport mechanism in detail. The forward and reverse bias current-voltage (I-V) characteristics were analyzed with considering various transport models. The fitting to the forward bias I-V characteristics revealed that relatively high ideality factor at 300 K for untreated sample were related with the generation-recombination (GR) current and the large E00 value at 100 K for 100 W plasma treated sample were associated with more significant tunneling effect. The analyses on the reverse bias current characteristics showed the suitable current transport model has changed from thermionic emission (TE) to TE combined with barrier lowering for both untreated and 250 W treated samples and from TE + BL to thermionic field emission for 100 W treated sample with increasing temperature from 100 to 300 K.

KW - Current transport mechanism

KW - n-type InP

KW - Tunneling current

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A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K

Abstract

Bibliographical note

Keywords

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