A CMOS optoelectronic receiver IC with an on-chip avalanche photodiode for home-monitoring LiDAR sensors

Ji Eun Joo; Myung Jae Lee; Sung Min Park

doi:10.3390/s21134364

A CMOS optoelectronic receiver IC with an on-chip avalanche photodiode for home-monitoring LiDAR sensors

Ji Eun Joo, Myung Jae Lee, Sung Min Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This paper presents an optoelectronic receiver (Rx) IC with an on-chip avalanche photo-diode (APD) realized in a 0.18-μm CMOS process for the applications of home-monitoring light detection and ranging (LiDAR) sensors, where the on-chip CMOS P⁺/N-well APD was implemented to avoid the unwanted signal distortion from bondwires and electro-static discharge (ESD) protec-tion diodes. Various circuit techniques are exploited in this work, such as the feedforward transim-pedance amplifier for high gain, and a limiting amplifier with negative impedance compensation for wide bandwidth. Measured results demonstrate 93.4-dBΩ transimpedance gain, 790-MHz band-width, 12-pA/√Hz noise current spectral density, 6.74-μApp minimum detectable signal that corre-sponds to the maximum detection range of 10 m, and 56.5-mW power dissipation from a 1.8-V supply. This optoelectronic Rx IC provides a potential for a low-cost low-power solution in the applications of home-monitoring LiDAR sensors.

Original language	English
Article number	4364
Journal	Sensors (Switzerland)
Volume	21
Issue number	13
DOIs	https://doi.org/10.3390/s21134364
State	Published - 1 Jul 2021

Keywords

Avalanche photodiode
CMOS
Feedforward
Limiting amplifier
Optoelectronic
Transimpedance amplifier

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10.3390/s21134364

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title = "A CMOS optoelectronic receiver IC with an on-chip avalanche photodiode for home-monitoring LiDAR sensors",

abstract = "This paper presents an optoelectronic receiver (Rx) IC with an on-chip avalanche photo-diode (APD) realized in a 0.18-μm CMOS process for the applications of home-monitoring light detection and ranging (LiDAR) sensors, where the on-chip CMOS P+/N-well APD was implemented to avoid the unwanted signal distortion from bondwires and electro-static discharge (ESD) protec-tion diodes. Various circuit techniques are exploited in this work, such as the feedforward transim-pedance amplifier for high gain, and a limiting amplifier with negative impedance compensation for wide bandwidth. Measured results demonstrate 93.4-dBΩ transimpedance gain, 790-MHz band-width, 12-pA/√Hz noise current spectral density, 6.74-μApp minimum detectable signal that corre-sponds to the maximum detection range of 10 m, and 56.5-mW power dissipation from a 1.8-V supply. This optoelectronic Rx IC provides a potential for a low-cost low-power solution in the applications of home-monitoring LiDAR sensors.",

keywords = "Avalanche photodiode, CMOS, Feedforward, Limiting amplifier, Optoelectronic, Transimpedance amplifier",

author = "Joo, {Ji Eun} and Lee, {Myung Jae} and Park, {Sung Min}",

note = "Funding Information: Funding: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2020R1A2C1008879). This work was supported by the National Research Foundation (NRF), Korea, under project BK21 FOUR. Funding Information: Acknowledgments: The EDA tool was supported by the IC Design Education Center. Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

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AU - Joo, Ji Eun

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AU - Park, Sung Min

N1 - Funding Information: Funding: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2020R1A2C1008879). This work was supported by the National Research Foundation (NRF), Korea, under project BK21 FOUR. Funding Information: Acknowledgments: The EDA tool was supported by the IC Design Education Center. Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2021/7/1

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N2 - This paper presents an optoelectronic receiver (Rx) IC with an on-chip avalanche photo-diode (APD) realized in a 0.18-μm CMOS process for the applications of home-monitoring light detection and ranging (LiDAR) sensors, where the on-chip CMOS P+/N-well APD was implemented to avoid the unwanted signal distortion from bondwires and electro-static discharge (ESD) protec-tion diodes. Various circuit techniques are exploited in this work, such as the feedforward transim-pedance amplifier for high gain, and a limiting amplifier with negative impedance compensation for wide bandwidth. Measured results demonstrate 93.4-dBΩ transimpedance gain, 790-MHz band-width, 12-pA/√Hz noise current spectral density, 6.74-μApp minimum detectable signal that corre-sponds to the maximum detection range of 10 m, and 56.5-mW power dissipation from a 1.8-V supply. This optoelectronic Rx IC provides a potential for a low-cost low-power solution in the applications of home-monitoring LiDAR sensors.

AB - This paper presents an optoelectronic receiver (Rx) IC with an on-chip avalanche photo-diode (APD) realized in a 0.18-μm CMOS process for the applications of home-monitoring light detection and ranging (LiDAR) sensors, where the on-chip CMOS P+/N-well APD was implemented to avoid the unwanted signal distortion from bondwires and electro-static discharge (ESD) protec-tion diodes. Various circuit techniques are exploited in this work, such as the feedforward transim-pedance amplifier for high gain, and a limiting amplifier with negative impedance compensation for wide bandwidth. Measured results demonstrate 93.4-dBΩ transimpedance gain, 790-MHz band-width, 12-pA/√Hz noise current spectral density, 6.74-μApp minimum detectable signal that corre-sponds to the maximum detection range of 10 m, and 56.5-mW power dissipation from a 1.8-V supply. This optoelectronic Rx IC provides a potential for a low-cost low-power solution in the applications of home-monitoring LiDAR sensors.

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A CMOS optoelectronic receiver IC with an on-chip avalanche photodiode for home-monitoring LiDAR sensors

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Keywords

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