A CMOS dual-mode high-dynamic-range wideband receiver RF front-end

Changchun Zhang; Yingjian Wu; Peng Zhang; Ying Zhang; Jie Liu; Sung Min Park

doi:10.5573/JSTS.2018.18.5.616

A CMOS dual-mode high-dynamic-range wideband receiver RF front-end

Changchun Zhang, Yingjian Wu, Peng Zhang, Ying Zhang, Jie Liu, Sung Min Park

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A dual-mode wideband high-dynamic-range receiver RF front-end consisting mainly of a low-noise amplifier (LNA) and a mixer is presented and implemented in standard 0.18 μm CMOS technology. Besides wideband input matching, the wideband LNA is optimized purposefully for low NF and high gain, and the mixer for high linearity and proper gain. In high-gain (HG) mode, with the LNA involved, the high sensitivity can be achieved; in low-gain (LG) mode, with the LNA bypassed, the mixer stands out and makes the front-end exhibit high linearity. In an overall view, the proposed dual-mode wideband RF front-end achieves a high dynamic range. With an occupied die area of 2360 µm× 1460 µm and a single supply voltage of 1.8V, measurement results show the dual-mode RF front-end can operate across the desired frequency range of 1.3 ~ 2 GHz and achieve gain of 20 dB and NF of 4.8dB in the HG mode, and average IIP3 of 8 dBm and P1dB of-4 dB in the LG mode, respectively.

Original language	English
Pages (from-to)	616-625
Number of pages	10
Journal	Journal of Semiconductor Technology and Science
Volume	18
Issue number	5
DOIs	https://doi.org/10.5573/JSTS.2018.18.5.616
State	Published - Oct 2018

Bibliographical note

Funding Information:
This work is supported by the Natural Science Foundation of China (Nos. 61604082, 61674036), the 14th “Six Talent Peaks” Project of Jiangsu Province (No. XYDXX-080), the Open Project of the State Key Laboratory of Millimeter Waves Program (No. K201725), and the Scientific Research Funds of Nanjing University of Posts and Telecommunications, China (No. NY215112).

Publisher Copyright:
© 2018, Institute of Electronics Engineers of Korea. All rights reserved.

Keywords

Dynamic range
LNA
Mixer
RF front-end
Wideband

Access to Document

10.5573/JSTS.2018.18.5.616

Cite this

@article{009bc86ba19f4d30b6e7ab26a1b13d43,

title = "A CMOS dual-mode high-dynamic-range wideband receiver RF front-end",

abstract = "A dual-mode wideband high-dynamic-range receiver RF front-end consisting mainly of a low-noise amplifier (LNA) and a mixer is presented and implemented in standard 0.18 μm CMOS technology. Besides wideband input matching, the wideband LNA is optimized purposefully for low NF and high gain, and the mixer for high linearity and proper gain. In high-gain (HG) mode, with the LNA involved, the high sensitivity can be achieved; in low-gain (LG) mode, with the LNA bypassed, the mixer stands out and makes the front-end exhibit high linearity. In an overall view, the proposed dual-mode wideband RF front-end achieves a high dynamic range. With an occupied die area of 2360 µm× 1460 µm and a single supply voltage of 1.8V, measurement results show the dual-mode RF front-end can operate across the desired frequency range of 1.3 ~ 2 GHz and achieve gain of 20 dB and NF of 4.8dB in the HG mode, and average IIP3 of 8 dBm and P1dB of-4 dB in the LG mode, respectively.",

keywords = "Dynamic range, LNA, Mixer, RF front-end, Wideband",

author = "Changchun Zhang and Yingjian Wu and Peng Zhang and Ying Zhang and Jie Liu and Park, {Sung Min}",

note = "Funding Information: This work is supported by the Natural Science Foundation of China (Nos. 61604082, 61674036), the 14th “Six Talent Peaks” Project of Jiangsu Province (No. XYDXX-080), the Open Project of the State Key Laboratory of Millimeter Waves Program (No. K201725), and the Scientific Research Funds of Nanjing University of Posts and Telecommunications, China (No. NY215112). Publisher Copyright: {\textcopyright} 2018, Institute of Electronics Engineers of Korea. All rights reserved.",

year = "2018",

month = oct,

doi = "10.5573/JSTS.2018.18.5.616",

language = "English",

volume = "18",

pages = "616--625",

journal = "Journal of Semiconductor Technology and Science",

issn = "1598-1657",

publisher = "Institute of Electronics Engineers of Korea",

number = "5",

}

TY - JOUR

T1 - A CMOS dual-mode high-dynamic-range wideband receiver RF front-end

AU - Zhang, Changchun

AU - Wu, Yingjian

AU - Zhang, Peng

AU - Zhang, Ying

AU - Liu, Jie

AU - Park, Sung Min

N1 - Funding Information: This work is supported by the Natural Science Foundation of China (Nos. 61604082, 61674036), the 14th “Six Talent Peaks” Project of Jiangsu Province (No. XYDXX-080), the Open Project of the State Key Laboratory of Millimeter Waves Program (No. K201725), and the Scientific Research Funds of Nanjing University of Posts and Telecommunications, China (No. NY215112). Publisher Copyright: © 2018, Institute of Electronics Engineers of Korea. All rights reserved.

PY - 2018/10

Y1 - 2018/10

N2 - A dual-mode wideband high-dynamic-range receiver RF front-end consisting mainly of a low-noise amplifier (LNA) and a mixer is presented and implemented in standard 0.18 μm CMOS technology. Besides wideband input matching, the wideband LNA is optimized purposefully for low NF and high gain, and the mixer for high linearity and proper gain. In high-gain (HG) mode, with the LNA involved, the high sensitivity can be achieved; in low-gain (LG) mode, with the LNA bypassed, the mixer stands out and makes the front-end exhibit high linearity. In an overall view, the proposed dual-mode wideband RF front-end achieves a high dynamic range. With an occupied die area of 2360 µm× 1460 µm and a single supply voltage of 1.8V, measurement results show the dual-mode RF front-end can operate across the desired frequency range of 1.3 ~ 2 GHz and achieve gain of 20 dB and NF of 4.8dB in the HG mode, and average IIP3 of 8 dBm and P1dB of-4 dB in the LG mode, respectively.

AB - A dual-mode wideband high-dynamic-range receiver RF front-end consisting mainly of a low-noise amplifier (LNA) and a mixer is presented and implemented in standard 0.18 μm CMOS technology. Besides wideband input matching, the wideband LNA is optimized purposefully for low NF and high gain, and the mixer for high linearity and proper gain. In high-gain (HG) mode, with the LNA involved, the high sensitivity can be achieved; in low-gain (LG) mode, with the LNA bypassed, the mixer stands out and makes the front-end exhibit high linearity. In an overall view, the proposed dual-mode wideband RF front-end achieves a high dynamic range. With an occupied die area of 2360 µm× 1460 µm and a single supply voltage of 1.8V, measurement results show the dual-mode RF front-end can operate across the desired frequency range of 1.3 ~ 2 GHz and achieve gain of 20 dB and NF of 4.8dB in the HG mode, and average IIP3 of 8 dBm and P1dB of-4 dB in the LG mode, respectively.

KW - Dynamic range

KW - LNA

KW - Mixer

KW - RF front-end

KW - Wideband

UR - http://www.scopus.com/inward/record.url?scp=85056338650&partnerID=8YFLogxK

U2 - 10.5573/JSTS.2018.18.5.616

DO - 10.5573/JSTS.2018.18.5.616

M3 - Article

AN - SCOPUS:85056338650

SN - 1598-1657

VL - 18

SP - 616

EP - 625

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

IS - 5

ER -

A CMOS dual-mode high-dynamic-range wideband receiver RF front-end

Abstract

Bibliographical note

Keywords

Access to Document

Fingerprint

Cite this