A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM

Jin Woo Han; Seong Wan Ryu; Sungho Kim; Chung Jin Kim; Jae Hyuk Ahn; Sung Jin Choi; Jin Soo Kim; Kwang Hee Kim; Gi Sung Lee; Jae Sub Oh; Myeong Ho Song; Yun Chang Park; Jeoung Woo Kim; Yang Kyu Choi

doi:10.1109/LED.2008.922142

A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM

Jin Woo Han
, Seong Wan Ryu
, Sungho Kim
, Chung Jin Kim
, Jae Hyuk Ahn
, Sung Jin Choi
, Jin Soo Kim
, Kwang Hee Kim
, Gi Sung Lee
, Jae Sub Oh
, Myeong Ho Song
, Yun Chang Park
, Jeoung Woo Kim
, Yang Kyu Choi

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An oxide/nitride/oxide layer and a floating-body are combined to perform a URAM operation in a single transistor. A buried n-well technology for NMOS allows hole accumulation for the 1T-DRAM operation in a p-type bulk substrate. The bulk FinFET URAM offers a cost-effective and fully compatible process with a conventional FinFET SONOS, and it also expedites heat dissipation. Highly reliable NVM and high-speed 1T-DRAM operation are confirmed, and it was also verified that there is no disturbance between the two memory functions.

Original language	English
Pages (from-to)	632-634
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	6
DOIs	https://doi.org/10.1109/LED.2008.922142
State	Published - Jun 2008

Keywords

1T-DRAM
Bulk FinFET
Capacitorless DRAM
FinFET
Nonvolatile memory (NVM)
SONOS
Unified-RAM (URAM)

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10.1109/LED.2008.922142

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title = "A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM",

abstract = "A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An oxide/nitride/oxide layer and a floating-body are combined to perform a URAM operation in a single transistor. A buried n-well technology for NMOS allows hole accumulation for the 1T-DRAM operation in a p-type bulk substrate. The bulk FinFET URAM offers a cost-effective and fully compatible process with a conventional FinFET SONOS, and it also expedites heat dissipation. Highly reliable NVM and high-speed 1T-DRAM operation are confirmed, and it was also verified that there is no disturbance between the two memory functions.",

keywords = "1T-DRAM, Bulk FinFET, Capacitorless DRAM, FinFET, Nonvolatile memory (NVM), SONOS, Unified-RAM (URAM)",

author = "Han, \{Jin Woo\} and Ryu, \{Seong Wan\} and Sungho Kim and Kim, \{Chung Jin\} and Ahn, \{Jae Hyuk\} and Choi, \{Sung Jin\} and Kim, \{Jin Soo\} and Kim, \{Kwang Hee\} and Lee, \{Gi Sung\} and Oh, \{Jae Sub\} and Song, \{Myeong Ho\} and Park, \{Yun Chang\} and Kim, \{Jeoung Woo\} and Choi, \{Yang Kyu\}",

year = "2008",

month = jun,

doi = "10.1109/LED.2008.922142",

language = "English",

volume = "29",

pages = "632--634",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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T1 - A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM

AU - Han, Jin Woo

AU - Ryu, Seong Wan

AU - Kim, Sungho

AU - Kim, Chung Jin

AU - Ahn, Jae Hyuk

AU - Choi, Sung Jin

AU - Kim, Jin Soo

AU - Kim, Kwang Hee

AU - Lee, Gi Sung

AU - Oh, Jae Sub

AU - Song, Myeong Ho

AU - Park, Yun Chang

AU - Kim, Jeoung Woo

AU - Choi, Yang Kyu

PY - 2008/6

Y1 - 2008/6

N2 - A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An oxide/nitride/oxide layer and a floating-body are combined to perform a URAM operation in a single transistor. A buried n-well technology for NMOS allows hole accumulation for the 1T-DRAM operation in a p-type bulk substrate. The bulk FinFET URAM offers a cost-effective and fully compatible process with a conventional FinFET SONOS, and it also expedites heat dissipation. Highly reliable NVM and high-speed 1T-DRAM operation are confirmed, and it was also verified that there is no disturbance between the two memory functions.

AB - A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An oxide/nitride/oxide layer and a floating-body are combined to perform a URAM operation in a single transistor. A buried n-well technology for NMOS allows hole accumulation for the 1T-DRAM operation in a p-type bulk substrate. The bulk FinFET URAM offers a cost-effective and fully compatible process with a conventional FinFET SONOS, and it also expedites heat dissipation. Highly reliable NVM and high-speed 1T-DRAM operation are confirmed, and it was also verified that there is no disturbance between the two memory functions.

KW - 1T-DRAM

KW - Bulk FinFET

KW - Capacitorless DRAM

KW - FinFET

KW - Nonvolatile memory (NVM)

KW - SONOS

KW - Unified-RAM (URAM)

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DO - 10.1109/LED.2008.922142

M3 - Article

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SN - 0741-3106

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SP - 632

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM

Abstract

Keywords

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