@article{cc4780c9be444ae09eee9951e5551844,
title = "A band-engineered one-transistor DRAM with improved data retention and power efficiency",
abstract = "In this letter, a one-transistor (1T) dynamic random-access memory (DRAM) with SiGe quantum well (QW) is proposed, and its performance is validated through the technology computer-aided design (TCAD) simulation. At the write operation, band-to-band tunneling is used and 1 V or lower programming voltage is realized by inserting the SiGe QW beside the drain. This QW also functions as the storage node, which enhances not only the current sensing margin but also the retention time (τret) compared with those of all-Si device. At an extremely scaled cell size and sub-10-ns write/erase operations, the proposed device shows 0.2-s-long τret and current ratio > 104. It has been verified that a single cycle of 1T DRAM operations consumes only 93.8 fJ.",
keywords = "DRAM retention, One-transistor DRAM, SiGe quantum well, band-to-band tunneling, low-power operation",
author = "Eunseon Yu and Seongjae Cho and Hyungsoon Shin and Park, {Byung Gook}",
note = "Funding Information: Manuscript received February 9, 2019; revised February 24, 2019; accepted February 26, 2019. Date of publication February 28, 2019; date of current version April 2, 2019. This work was supported in part by the Ministry of Trade, Industry and Energy (MOTIE) and the Korea Semiconductor Research Consortium Support Program for the development of future semiconductor devices under Grant 10080513 and Grant 10052928 and in part by the Ministry of Science, ICT and Future Planning under Grant NRF-2016M3A7B4910348 and Grant NRF-2017R1A2B2011570. The review of this letter was arranged by Editor B. S. Doyle. (Corresponding author: Seongjae Cho.) E. Yu and S. Cho are with the Department of Electronics Engineering, Gachon University, Seongnam 13120, South Korea (e-mail: felixcho@ gachon.ac.kr). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2019",
month = apr,
doi = "10.1109/LED.2019.2902334",
language = "English",
volume = "40",
pages = "562--565",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}