A 12mW 5GHz wideband low-noise amplifier in 0.13μm CMOS using noise cancellation

Hyewon Kim, Jiyoung Tak, Jinju Lee, Jihye Shin, Jungwon Han, Sung Min Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This paper presents a wideband low-noise amplifier (LNA) exploiting noise cancellation technique, which operates at 800MHz-5.7GHz for low-power multi-standard applications. Implemented in a 0.13μm CMOS technology, the measured results of the LNA demonstrate the maximum gain of 11.7dB in the frequency range of 811MHz∼5.7GHz, the noise figure of 2.58∼5.11dB within the bandwidth, the input-referred third order intercept point (IIP3) of 1.6dBm at 2.4GHz, and the power consumption of 12mW from a single 1.2V supply. The chip occupies the total area of 0.7×0.9mm2.

Original languageEnglish
Title of host publication2011 IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals, IMWS-IRFPT 2011
DOIs
StatePublished - 2011
Event2011 IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals, IMWS-IRFPT 2011 - Daejeon, Korea, Republic of
Duration: 24 Aug 201125 Aug 2011

Publication series

Name2011 IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals, IMWS-IRFPT 2011

Conference

Conference2011 IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals, IMWS-IRFPT 2011
Country/TerritoryKorea, Republic of
CityDaejeon
Period24/08/1125/08/11

Keywords

  • CMOS
  • LNA
  • multi-standard
  • noise cancellation
  • wideband

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