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1.4 kV AlGaN/GaN HEMTs employing As+ ion implantation on SiO2 passivation layer
Jiyong Lim, Young Hwan Choi, Kyu Heon Cho, Jihye Lee, William Jo, Min Koo Han
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
3
Scopus
citations