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1.4 kV AlGaN/GaN HEMTs employing As+ ion implantation on SiO2 passivation layer

  • Jiyong Lim
  • , Young Hwan Choi
  • , Kyu Heon Cho
  • , Jihye Lee
  • , William Jo
  • , Min Koo Han

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

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