Engineering
Field-Effect Transistor
100%
Tunnel Construction
81%
Resistive
78%
Flash Memory
62%
Metal-Oxide-Semiconductor Field-Effect Transistor
46%
Dynamic Random Access Memory
39%
Heterojunctions
34%
Nanowire
31%
Radio Frequency
27%
Random Access Memory
26%
Nitride
26%
Neuromorphic System
26%
Nonvolatile Memory
26%
Nodes
25%
Polysilicon
22%
Silicon on Insulator
20%
Resistive Random Access Memory
18%
Computer Aided Design
17%
Indium Gallium Arsenide
17%
Random Access Memory Device
16%
Channel Length
15%
Gate Length
15%
Retention Time
15%
Resonator
15%
Quantum Well
14%
Q Factor
12%
Roughness Effect
12%
Band Gap
12%
Memory Array
12%
Nanoscale
12%
Current Ratio
11%
Device Performance
11%
Field Effect Transistor
11%
Gallium Arsenide
11%
Dielectrics
10%
Light-Emitting Diode
10%
Cutoff Frequency
10%
Design Optimization
10%
Erase Operation
9%
Data Retention
9%
Fin Width
9%
Band Offset
9%
Low Power Operation
8%
Core-Shell
8%
Compound Semiconductor
8%
High Integration Density
8%
Transients
8%
Control Gate
8%
Low-Temperature
7%
Electrical Performance
7%
Material Science
Field Effect Transistor
87%
Transistor
54%
Density
46%
Heterojunction
43%
Oxide Compound
37%
Electronic Circuit
33%
Silicon Nitride
33%
Metal-Oxide-Semiconductor Field-Effect Transistor
22%
Resistive Random-Access Memory
19%
Nitride Compound
19%
Nanowire
15%
Capacitance
15%
Indium Gallium Arsenide
15%
Resonator
15%
Germanium
14%
Film
14%
Surface Roughness
12%
Dielectric Material
12%
Neuromorphic Computing
11%
Gallium Arsenide
11%
Indium
11%
Gallium
10%
Electrical Property
9%
Zinc Oxide
8%
Complementary Metal-Oxide-Semiconductor Device
8%
Compound Semiconductor
7%
Charge Trapping
7%
Quantum Well
7%
Thin Films
7%
Transmission Electron Microscopy
6%
Epitaxy
6%
Oxygen Vacancy
6%
ZnO
6%
Buffer Layer
6%
Gallium Nitride
6%
Indium Tin Oxide
6%
Finite Difference Method
6%
Semiconductor Material
6%
Pattern Recognition
6%
Optical Device
6%
Annealing
5%
Hole Mobility
5%
Current-Voltage Characteristic
5%
Doping (Additives)
5%
