Engineering & Materials Science
Alpha particles
9%
Analytical models
10%
Capacitance
25%
Data storage equipment
30%
Degradation
42%
Dielectric relaxation
10%
Distribution functions
9%
Doping (additives)
47%
Drain current
10%
Dynamic random access storage
54%
Electric potential
43%
Electric power utilization
20%
Electron mobility
60%
Electron scattering
11%
Electrons
16%
Gallium
11%
Grain boundaries
10%
Hardware security
12%
Hole mobility
20%
Hot carriers
91%
Hot electrons
9%
Impurities
10%
Indium
10%
Interface states
13%
Inversion layers
32%
Logic devices
12%
Memristors
16%
Metals
8%
MOSFET devices
47%
MRAM devices
35%
Networks (circuits)
31%
Oxide films
14%
Oxides
27%
Phonons
15%
Polysilicon
53%
RRAM
44%
Scattering
17%
Semiconductor doping
9%
Semiconductor quantum wells
11%
Silicon
37%
Simulators
14%
Substrates
17%
Temperature
23%
Tensile stress
8%
Thin film transistors
49%
Threshold voltage
11%
Torque
24%
Transistors
30%
Tunnel junctions
100%
Zinc oxide
11%
Physics & Astronomy
amplifiers
6%
augmentation
13%
capacitance
11%
capacitors
6%
cells
18%
CMOS
6%
computer design
10%
degradation
10%
electric potential
19%
electron mobility
16%
equivalent circuits
8%
field effect transistors
65%
field-programmable gate arrays
8%
fins
7%
gallium oxides
10%
high speed
6%
hole mobility
8%
impedance
5%
indium
7%
insulators
11%
inversions
12%
isolation
5%
light sources
5%
logic
9%
logic circuits
9%
margins
8%
metal oxide semiconductors
16%
modules
5%
Monte Carlo method
5%
oscillators
7%
oxides
7%
pumping
6%
random access memory
38%
saturation
10%
scattering
6%
selectors
5%
signal processing
5%
silicon
20%
simulation
26%
simulators
18%
thermal noise
7%
thin films
13%
threshold voltage
6%
torque
14%
transistors
27%
tunnel junctions
33%
zinc oxides
8%
Chemical Compounds
Capacitor
6%
Charge Pumping
19%
Compound Mobility
31%
Deformation Potential
16%
Degradation Rate
6%
Density of State
13%
Dielectric Relaxation
7%
Dipole
6%
Distribution Function
7%
Dose
8%
Drain Current
9%
Drop
8%
Electron Mobility
28%
Electron Particle
8%
Electron Spin
5%
Energy
5%
Error
6%
Field Effect
20%
Flexibility
10%
Grain Boundary
8%
Hole Mobility
14%
Hydrodynamics
5%
Implant
18%
Interface Roughness
5%
Interface State
19%
Length
16%
Magnetic Field
5%
Magnetic Torque
6%
Microwave
5%
Momentum
5%
Oxide
9%
Parasitic
11%
Phonon
5%
Polycrystalline Solid
13%
Polyimide Macromolecule
6%
Reduction
14%
Resistance
11%
Retention Time
7%
Shape
6%
Simulation
70%
Single Crystalline Solid
5%
Strain
7%
Structure Parameter
7%
Surface Roughness
7%
Time
13%
Torque
22%
Voltage
43%
