Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Magnetic Tunnel Junction
45%
Polysilicon
24%
Simulation Result
21%
Mobility Enhancement
19%
Dynamic Random Access Memory
18%
Thin-Film Transistor
18%
Magnetoresistive Random-Access Memory
16%
Array Size
15%
Electric Power Utilization
15%
Resistive Random Access Memory
15%
Quantum Effect
15%
Oscillator
13%
Saturation Region
13%
Spin Transfer
12%
Shallow Trench Isolation
11%
Elevated Temperature
11%
Bit Line
11%
Interface State
11%
Silicon on Insulator
10%
Drain Junction
10%
Gate Voltage
10%
Level Model
8%
Analytical Model
8%
Channel Length
8%
Temperature Dependence
8%
Carrier Effect
8%
Current Drain
8%
Structural Approach
7%
Switching Time
7%
Array Architecture
7%
Doping Level
7%
Simulation Program
7%
Two Dimensional
7%
Transients
7%
Low Power Consumption
7%
Circuit Simulation
7%
Enhanced Strain
6%
Electric Field
6%
Grain Boundaries
6%
Resistive
6%
Tensiles
6%
Sense Amplifier
6%
Induced Charge
5%
Channel Region
5%
Frequency Noise
5%
Parasitic Capacitance
5%
Frequency Domain
5%
Synaptic Weight
5%
Measured Data
5%
Material Science
Metal-Oxide-Semiconductor Field-Effect Transistor
37%
Hot Carrier
24%
Density
22%
Thin-Film Transistor
19%
Electron Mobility
19%
Electronic Circuit
13%
Capacitance
11%
Boron
11%
Electrical Property
8%
Transistor
8%
Hole Mobility
7%
Surface Roughness
7%
Oxide Compound
6%
Indium
5%
Zinc Oxide
5%
Gallium
5%
Grain Boundaries
5%