Material Science
Actuator
10%
Annealing
8%
Boron Nitride
8%
Capacitance
24%
Capacitor
8%
Carbon Nanotube
100%
Carrier Concentration
7%
Carrier Mobility
13%
Composite Material
11%
Conductor
6%
Density
28%
Dephasing
16%
Dielectric Material
18%
Doping (Additives)
10%
Electrical Resistivity
31%
Electronic Circuit
7%
Ferroelectric Material
21%
Field Effect Transistor
35%
Film
48%
Fluid Statics
8%
Graphene
64%
Heterojunction
18%
Indium
6%
Liquid Crystal
11%
Magnetoresistance
30%
Molybdenum
9%
Monolayers
24%
Nanoparticle
11%
Nanowire
13%
Negative Resistance
6%
Niobium
7%
Nitride Compound
7%
Oxide Compound
23%
Phase Change Material
9%
Phase-Change Memory
26%
Photoemission Spectroscopy
6%
Polyacetylene
77%
Pulsed Laser Deposition
6%
Resistive Random-Access Memory
6%
Schottky Barrier
10%
Silicon
8%
Single Crystal
15%
Supercapacitors
15%
Thermoelectrics
11%
Thin Films
29%
Transistor
18%
Transition Metal Dichalcogenide
8%
Transition Metal Oxide
8%
Two-Dimensional Material
11%
ZnO
7%
Engineering
2D Material
5%
Actuation
13%
Actuator
5%
Ambient Pressure
6%
Applied Voltage
7%
Artificial Muscle
6%
Band Structure
5%
Carbon Nanotube
57%
Carrier Concentration
5%
Carrier Mobility
7%
Charge Carrier
7%
Charge Trap Memory
6%
Conductive
12%
Deposited Film
14%
Dielectrics
8%
Face-Centered Cubic
6%
Field-Effect Transistor
21%
Frequency Noise
6%
Gate Voltage
8%
Graphene
42%
Heterojunctions
14%
Low-Temperature
23%
Magnetic Field
19%
Molybdenum Disulfide
26%
Monolayers
19%
Nonvolatile Memory
5%
Passivation
12%
Phase Change Material
6%
Phase Change Memory
9%
Polycrystalline
6%
Pressure Distribution
13%
Pulsed Laser
9%
Random Access Memory
7%
Ray Photoelectron Spectroscopy
6%
Resistive
9%
Room Temperature
16%
Schottky Barrier
9%
Single-Walled Carbon Nanotube
6%
Temperature Conductivity
13%
Temperature Dependence
14%
Tensiles
12%
Thin Films
19%
Transition Metal Dichalcogenide
6%
Two Dimensional
21%
Valence Band
5%
Yttria-Stabilized Zirconia
6%