Material Science
Actuator
10%
Annealing
7%
Boron Nitride
8%
Capacitance
24%
Capacitor
8%
Carbon Nanotube
100%
Carrier Concentration
7%
Carrier Mobility
14%
Charge Carrier
5%
Conductor
6%
Density
28%
Dephasing
16%
Device Fabrication
5%
Dielectric Material
18%
Doping (Additives)
10%
Electrical Property
5%
Electrical Resistivity
31%
Electrochemical Capacitance
5%
Electronic Circuit
7%
Ferroelectric Material
21%
Field Effect Transistor
35%
Film
46%
Graphene
65%
Heterojunction
15%
Indium
6%
Liquid Crystal
11%
Magnetoresistance
30%
Molybdenum
8%
Monolayers
25%
Nanoparticle
11%
Nanotube
6%
Nanowire
7%
Negative Resistance
6%
Oxide Compound
23%
Phase Change Material
9%
Phase-Change Memory
26%
Photoemission Spectroscopy
6%
Polyacetylene
78%
Pulsed Laser Deposition
6%
Resistive Random-Access Memory
6%
Schottky Barrier
11%
Single Crystal
15%
Supercapacitors
12%
Thermoelectrics
11%
Thin Films
29%
Transistor
19%
Transition Metal Dichalcogenide
8%
Transition Metal Oxide
8%
Two-Dimensional Material
11%
Zirconia
6%
Engineering
2D Material
5%
Actuation
13%
Ambient Pressure
6%
Applied Voltage
7%
Artificial Muscle
6%
Band Structure
5%
Building Block
5%
Carbon Nanotube
57%
Carrier Concentration
5%
Carrier Mobility
7%
Charge Carrier
7%
Charge Trap Memory
6%
Conductive
12%
Deposited Film
15%
Dielectrics
9%
Dopants
5%
Electric Power Utilization
5%
Face-Centered Cubic
6%
Field-Effect Transistor
21%
Frequency Noise
6%
Gate Voltage
8%
Graphene
42%
Harvester
5%
Heterojunctions
11%
Low-Temperature
23%
Magnetic Field
19%
Molybdenum Disulfide
23%
Monolayers
19%
Nonvolatile Memory
5%
Passivation
12%
Phase Change Material
6%
Phase Change Memory
10%
Polycrystalline
6%
Pressure Distribution
13%
Pulsed Laser
10%
Random Access Memory
7%
Ray Photoelectron Spectroscopy
6%
Reactive Sputtering
5%
Resistive
10%
Room Temperature
16%
Schottky Barrier
10%
Single-Walled Carbon Nanotube
6%
Temperature Conductivity
13%
Temperature Dependence
14%
Tensiles
12%
Thin Films
19%
Transition Metal Dichalcogenide
6%
Two Dimensional
22%
Valence Band
5%
Yttria-Stabilized Zirconia
6%
Physics
Electron Paramagnetic Resonance
6%
Field Effect Transistor
8%
Graphene
26%
Heterojunctions
6%
Indium
6%
Linewidth
6%
Magnetic Field
24%
Magnetoresistance
25%
Phase Change
6%
Photoelectron Spectroscopy
6%
Polyacetylene
53%
Polycrystalline
6%
Pressure Distribution
16%
Pulsed Laser Deposition
10%
Quantum Hall Effect
6%
Temperature Dependence
15%
Thermoelectricity
10%
Thin Films
5%
Transients
5%
Volume
5%
Yttria-Stabilized Zirconia
6%
