Material Science
Carbon Nanotube
100%
Polyacetylene
77%
Graphene
64%
Film
45%
Field Effect Transistor
35%
Electrical Resistivity
31%
Magnetoresistance
30%
Thin Films
29%
Density
28%
Phase-Change Memory
26%
Monolayers
24%
Capacitance
23%
Oxide Compound
23%
Ferroelectric Material
21%
Transistor
18%
Dielectric Material
18%
Dephasing
16%
Heterojunction
15%
Single Crystal
15%
Carrier Mobility
13%
Supercapacitors
12%
Nanoparticle
11%
Two-Dimensional Material
11%
Thermoelectrics
11%
Liquid Crystal
11%
Schottky Barrier
10%
Actuator
10%
Nanowire
10%
Doping (Additives)
10%
Phase Change Material
9%
Transition Metal Oxide
8%
Transition Metal Dichalcogenide
8%
Capacitor
8%
Boron Nitride
8%
Niobium
8%
Nitride Compound
8%
Annealing
8%
Molybdenum
8%
Carrier Concentration
7%
Electronic Circuit
7%
Indium
6%
Pulsed Laser Deposition
6%
Photoemission Spectroscopy
6%
Conductor
6%
Resistive Random-Access Memory
6%
Negative Resistance
6%
Zirconia
6%
Nanotube
6%
Device Fabrication
5%
Charge Carrier
5%
Engineering
Carbon Nanotube
57%
Graphene
42%
Low-Temperature
23%
Molybdenum Disulfide
23%
Two Dimensional
21%
Field-Effect Transistor
21%
Thin Films
19%
Magnetic Field
19%
Monolayers
19%
Room Temperature
16%
Deposited Film
14%
Temperature Dependence
14%
Temperature Conductivity
13%
Actuation
13%
Pressure Distribution
13%
Passivation
12%
Tensiles
12%
Conductive
12%
Heterojunctions
11%
Schottky Barrier
9%
Resistive
9%
Phase Change Memory
9%
Pulsed Laser
9%
Dielectrics
8%
Gate Voltage
8%
Random Access Memory
7%
Carrier Mobility
7%
Charge Carrier
7%
Applied Voltage
7%
Ray Photoelectron Spectroscopy
6%
Ambient Pressure
6%
Face-Centered Cubic
6%
Single-Walled Carbon Nanotube
6%
Charge Trap Memory
6%
Phase Change Material
6%
Yttria-Stabilized Zirconia
6%
Transition Metal Dichalcogenide
6%
Artificial Muscle
6%
Polycrystalline
6%
Frequency Noise
6%
Band Structure
5%
Carrier Concentration
5%
Nonvolatile Memory
5%
Valence Band
5%
2D Material
5%
Physics
Polyacetylene
53%
Graphene
26%
Magnetoresistance
25%
Magnetic Field
23%
Pressure Distribution
16%
Temperature Dependence
15%
Pulsed Laser Deposition
9%
Thermoelectricity
9%
Field Effect Transistor
8%
Phase Change
6%
Indium
6%
Heterojunctions
6%
Polycrystalline
6%
Electron Paramagnetic Resonance
6%
Quantum Hall Effect
6%
Photoelectron Spectroscopy
6%
Yttria-Stabilized Zirconia
6%
Linewidth
6%
Thin Films
5%
Transients
5%
Volume
5%
